В предложениях
Hot carrier injection describes the phenomenon by which carriers gain sufficient energy to be injected into the gate oxide. This occurs as carriers move along the channel of a MOSFET and experience impact ionization near the drain end of the device. The damage can occur at the interface, within the
oxide and/or within the sidewall spacer. Interface-state generation and charge trapping induced by this mechanism result in transistor parameter degradation, typically switching frequency degradation rather than a “hard’ functional failure.

Извиняюсь за такой длинный пример, интересуют только те два словосочетания.

Спасибо.

Спасибо.