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| Pendeo-epitaxy (Pendeo-epitaxy as a technology is known to enable drastic reduction of the densities of structural defects in GaN over three to four orders of magnitude. YKV) | |||
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| Pendeo-epitaxy (Pendeo-epitaxy as a technology is known to enable drastic reduction of the densities of structural defects in GaN over three to four orders of magnitude. YKV) | |||