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Subject: Помогите с аббревиатурами и определениями, область наноэлектроника, текст про сравнение 3 и 2 мерной NAND памяти gen. The scaling limits for 10nm-class and sub-10nm 2D planar NAND structures include patterning technology including QPT (Quadruple Patterning Technology), cell-to-cell interference such as cross-talk, poly-Si gap-filling process for control gate (CG), self-aligned STI (SA-STI) for isolation patterning, self-aligned process (SAP) for CG/FG, interconnection methodology including pad layout/design, inter-poly dielectric (IPD) layer engineering, and cell transistor channel/source-drain (S/D) engineering.
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link 18.02.2017 8:23 |
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все аббревиатуры? NAND - словарь self-aligned STI - Shallow Trench Isolation (STI) - гугль: CG/FG - effective floating gate (FG) height, crosstalk-related dimensions, control gate (CG) filling factors, гугль: дальше надоело. |
| Спасибо, мне нужны были CG/FG и STI, остальное-просто на случай, если я не те аббревиатуры нашел, ( при запросе STI гугл выдавал про субару) |
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